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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD1476 description low collector saturation voltage : v ce(sat) = 1.0v(max)@ i c = 2a collector-emitter breakdown voltage- : v (br)ceo = 60v (min) good linearity of h fe applications designed for power switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 6 v i c collector current-continuous 4 a i b b base current-peak 1 a collector power dissipation @ t c =25 35 p c collector power dissipation @ t a =25 1.4 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1476 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 25ma; i b = 0 60 v v ce( sat ) collector-emitter saturation voltage i c = 2a; i b = 0.2a b 1.0 v v be( on ) base-emitter on voltage i c = 1a; v ce = 4v 1.2 v i cbo collector cutoff current v cb = 80v; i e = 0 100 a i ebo emitter cutoff current v eb = 6v; i c = 0 100 a h fe-1 dc current gain i c = 1a; v ce = 4v 40 320 h fe-2 dc current gain i c = 3a; v ce = 4v 20 f t current-gain?bandwidth product i c = 0.2a; v ce = 12v 50 mhz switching times t on turn-on time 0.35 s t stg storage time 1.0 s t f fall time i c = 4a; i b1 = -i b2 = 0.4a 0.3 s ? h fe- 1 classifications r q p o 40-90 70-150 120-250 160-320 isc website www.iscsemi.cn 2 |
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